Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots

摘要

In the present work we have investigated the transport properties in a numberof Si/SiGe samples with square antidot lattices of different periods. Insamples with lattice periods equal to 700 nm and 850 nm we have observed theconventional low-field commensurability magnetoresistance peaks consistent withthe previous observations in GaAs/AlGaAs and Si/SiGe samples with antidotlattices. In samples with a 600 nm lattice period a new series ofwell-developed magnetoresistance oscillations has been found beyond the lastcommensurability peak which are supposed to originate from periodic skippingorbits encircling an antidot with a particular number of bounds.